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S71GL064A80BAI0F3 参数 Datasheet PDF下载

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型号: S71GL064A80BAI0F3
PDF下载: 下载PDF文件 查看货源
内容描述: 堆叠式多芯片产品( MCP )闪存和RAM [Stacked Multi-Chip Product (MCP) Flash Memory and RAM]
分类和应用: 闪存
文件页数/大小: 102 页 / 1762 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
Table 26. Switching Characteristics  
Min  
Max  
Parameter  
Read Cycle  
Description  
Unit  
tRC  
Read Cycle Time  
70  
10  
tAA  
Address to Data Valid  
70  
tOHA  
Data Hold from Address Change  
CE#1 Low and CE2 High to Data Valid  
OE# Low to Data Valid  
tACE  
70  
35  
tDOE  
tLZOE  
tHZOE  
tLZCE  
tHZCE  
tDBE  
OE# Low to Low Z (note 2, 3)  
5
5
OE# High to High Z (note 2, 3)  
CE#1 Low and CE2 High to Low Z (note 2, 3)  
CE#1 High and CE2 Low to High Z (note 2, 3)  
BHE# / BLE# Low to Data Valid  
BHE# / BLE# Low to Low Z (note 2, 3)  
BHE# / BLE# High to High Z (note 2, 3)  
Address Skew  
25  
ns  
25  
70  
tLZBE  
tHZBE  
tSK (note 4)  
5
25  
10  
Write Cycle (note 5)  
tWC  
tSCE  
tAW  
Write Cycle Time  
70  
55  
55  
0
CE#1 Low an CE2 High to Write End  
Address Set-Up to Write End  
Address Hold from Write End  
Address Set-Up to Write Start  
WE# Pulse Width  
tHA  
tSA  
0
tPWE  
tBW  
55  
55  
25  
0
ns  
BLE# / BHE# LOW to Write End  
Data Set-up to Write End  
tSD  
tHD  
Data Hold from Write End  
tHZWE  
tLZWE  
WE# Low to High Z (note 2, 3)  
WE# High to Low Z (note 2, 3)  
25  
5
Notes:  
1. Test conditions assume signal transition time of 1V/ns or higher, timing reference levels of VCC(typ.) /2, input pulse levels of  
0 to VCC(typ.), and output loading of the specified IOL/IOH and 30 pF load capacitance.  
2. tHZOE, tHZCE, tHZBE and tHZWE transitions are measured when the outputs enter a high-impedance state.  
3. High-Z and Low-Z parameters are characterized and are not 100% tested.  
4. To achieve 55-ns performance, the read access should be CE# controlled. In this case tACE is the critical parameter and tSK is  
satisfied when the addresses are stable prior to chip enable going active. For the 70-ns cycle, the addresses must be stable  
within 10 ns after the start of the read cycle.  
5. The internal write time of the memory is defined by the overlap of WE#, CE#1 = VIL, CE2 = VIH, BHE and/or BLE =VIL. All  
signals must be Active to initiate a write and any of these signals can terminate a write by going Inactive. The data input set-  
up and hold timing should be referenced to the edge of the signal that terminates write.  
84  
S71GL032A Based MCPs  
S71GL032A_00_A0 March 31, 2005  
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