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S71GL064A80BAI0F3 参数 Datasheet PDF下载

S71GL064A80BAI0F3图片预览
型号: S71GL064A80BAI0F3
PDF下载: 下载PDF文件 查看货源
内容描述: 堆叠式多芯片产品( MCP )闪存和RAM [Stacked Multi-Chip Product (MCP) Flash Memory and RAM]
分类和应用: 闪存
文件页数/大小: 102 页 / 1762 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
Figure 28. Write Cycle 1 (WE# Controlled)  
Notes:  
1. High-Z and Low-Z parameters are characterized and are not 100% tested.  
2. The internal write time of the memory is defined by the overlap of WE#, CE#1 = VIL, CE2 = VIH, BHE and/or BLE =VIL. All  
signals must be Active to initiate a write and any of these signals can terminate a write by going Inactive. The data input set-  
up and hold timing should be referenced to the edge of the signal that terminates write.  
3. Data I/O is high impedance if OE# VIH  
.
4. If Chip Enable goes Inactive simultaneously with WE# = High, the output remains in a high-impedance state.  
5. During the Don’t Care period in the Data I/O waveform, the I/Os are in output state and input signals should not be applied.  
86  
S71GL032A Based MCPs  
S71GL032A_00_A0 March 31, 2005  
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