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S71GL064A80BAI0F3 参数 Datasheet PDF下载

S71GL064A80BAI0F3图片预览
型号: S71GL064A80BAI0F3
PDF下载: 下载PDF文件 查看货源
内容描述: 堆叠式多芯片产品( MCP )闪存和RAM [Stacked Multi-Chip Product (MCP) Flash Memory and RAM]
分类和应用: 闪存
文件页数/大小: 102 页 / 1762 K
品牌: SPANSION [ SPANSION ]
 浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第81页浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第82页浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第83页浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第84页浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第86页浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第87页浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第88页浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第89页  
A d v a n c e I n f o r m a t i o n  
Switching Waveforms  
t
RC  
ADDRESS  
DATA OUT  
t
AA  
t
t
SK  
OHA  
PREVIOUS DATA VALID  
DATA VALID  
Figure 26. Read Cycle 1 (Address Transition Controlled)  
Notes:  
1. To achieve 55-ns performance, the read access should be CE# controlled. In this case tACE is the critical parameter and tSK is  
satisfied when the addresses are stable prior to chip enable going active. For the 70-ns cycle, the addresses must be stable  
within 10 ns after the start of the read cycle.  
2. Device is continuously selected. OE#, CE# = VIL.  
3. WE# is High for Read Cycle.  
ADDRESS  
tRC  
tSK  
CE#1  
tHZCE  
CE  
2
tACE  
BHE#/BLE#  
OE#  
tDBE  
tHZBE  
t
LZBE  
tHZOE  
tDOE  
t
HIGH  
LZOE  
IMPEDENCE  
HIGH IMPEDENCE  
DATA OUT  
DATA VALID  
t
LZCE  
Figure 27. Read Cycle 2 (OE# Controlled)  
Notes:  
1. To achieve 55-ns performance, the read access should be CE# controlled. In this case tACE is the critical parameter and tSK is  
satisfied when the addresses are stable prior to chip enable going active. For the 70-ns cycle, the addresses must be stable  
within 10 ns after the start of the read cycle.  
2. WE# is High for Read Cycle.  
March 31, 2005 S71GL032A_00_A0  
S71GL032A Based MCPs  
85  
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