Si3220/Si3225
Table 6. Linefeed Characteristics (Continued)
(VDD, VDD1–VDD4 = 3.13 to 5.25 V, TA = 0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
Parameter
Symbol
Test Condition
Min
Typ Max Unit
Loop Voltage Sense Accuracy
Accuracy of boundaries for
each output code;
—
±2
±7
—
±4
%
%
%
V
– V
= 48 V
RING
TIP
Loop Current Sense Accuracy
Accuracy of boundaries for
each output code;
—
—
±10
±25
I
= 18 mA
LOOP
Power Alarm Threshold Accuracy
Power Threshold = 300 mW
Notes:
1. Adaptive linefeed is enabled when the VOCDELTA RAM address is set to a non-zero value and is disabled when
VOCDELTA is set to 0.
2. RDC,MAX is the maximum dc resistance of the CPE; hence the specified total loop resistance is RLOOP + RDC,MAX
.
3. Ringing amplitude is set for 93 V peak using the RINGAMP RAM address and measured at TIP-RING using no series
protection resistance.
Table 7. Monitor ADC Characteristics
(VDD, VDD1–VDD4 = 3.13 to 5.25 V, TA = 0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
Parameter
Resolution
Symbol
Test Condition
Min
—
Typ
8
Max
—
Unit
Bits
Differential Nonlinearity
DNL
INL
–1.0
±0.75
+1.5
LSB
LSB
LSB
LSB
Integral Nonlinearity
Gain Error
—
—
±0.6
±0.1
±1.5
±0.25
Table 8. Si3200 Characteristics
(VDD = 3.13 to 5.25 V, TA = 0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
Parameter
Symbol
Test Condition
– V (Forward)
Min
Typ Max
Unit
TIP/RING Pulldown Transistor Satura-
tion Voltage
V
V
OV
RING
BAT
V
– V
(Reverse)
BAT
TIP
1
I
= 22 mA, I
= 4 mA
ABIAS
3
V
V
LIM
I
= 45 mA,
4
—
LIM
1
I
= 16 mA
ABIAS
TIP/RING Pullup Transistor
Saturation Voltage
V
GND – V
(Forward)
CM
TIP
GND – V
(Reverse)
RING
1
1
I
I
= 22 mA
= 45 mA
3
4
V
V
LIM
LIM
—
Battery Switch Saturation
Impedance
R
(V
– V )/I (Note 2)
BATH OUT
15
Ω
SAT
BAT
Notes:
1. VAC = 2.5 VPK, RLOAD = 600 Ω.
2. IOUT = 60 mA
Rev. 1.0
13
SILICONIMAGE [ Silicon image ]
