Si3220/Si3225
Table 4. 5 V Power Supply Characteristics
1
(Continued)
(V
DD
, V
DD1
–V
DD4
=
5 V, T
A
=
0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
Parameter
V
BAT
Supply Current
(Si3200)
Symbol
I
VBAT
Test Condition
Sleep mode, RESET = 0,
V
BAT
= –70 V
Open (high-impedance), V
BAT
= –70 V
Active on-hook standby, V
BAT
= –70 V
Forward/reverse active off-hook,
ABIAS = 4 mA, V
BAT
= –24 V
Forward/reverse OHT, OBIAS = 4 mA,
V
BAT
= –70 V
Ringing, V
RING
= 45 V
rms
,
V
BAT
= –70 V,
1 REN load
2
Min
—
—
—
—
Typ
100
225
400
4.4 +
I
LIM
8.4
6
Max
—
—
—
—
Unit
µA
µA
µA
mA
—
—
—
—
mA
mA
Chipset Power
Consumption
P
SLEEP
P
OPEN
P
STBY
P
STBY
P
ACTIVE3
P
ACTIVE3
P
OHT
P
OHT
P
RING
Sleep mode, RESET = 0,
V
BAT
= –70 V
Open (high-impedance), V
BAT
= –70 V
Active on-hook standby, V
BAT
= –48 V
Active on-hook standby, V
BAT
= –70 V
Forward/reverse active off-hook,
ABIAS = 4 mA, V
BAT
= –24 V
Forward/reverse active off-hook,
ABIAS = 4 mA, V
BAT
= –48 V
Forward/reverse OHT, OBIAS = 4 mA,
V
BAT
= –48 V
Forward/reverse OHT, OBIAS = 4 mA,
V
BAT
= –70 V
Ringing, V
RING
= 45 V
rms
,
V
BAT
= –70 V, 1 REN load
2
—
—
—
—
—
—
—
—
—
12
115
120
130
385
490
700
890
585
—
—
—
—
—
—
—
—
—
mW
mW
mW
mW
mW
mW
mW
mW
mW
Notes:
1.
All specifications are for a single channel based on measurements with both channels in the same operating state.
2.
See "Ringing Power Considerations" on page 50 for current and power consumption under other operating conditions.
3.
Power consumption does not include additional power required for dc loop feed. Total system power consumption must
include an additional V
BAT
x I
LOOP
term.
Rev. 1.0
9
SILICONIMAGE [ Silicon image ]
