Si3220/Si3225
Table 8. Si3200 Characteristics (Continued)
(VDD = 3.13 to 5.25 V, TA = 0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
Parameter
Symbol
Test Condition
R = 0Ω
Min
Typ Max
Unit
µA
V
OPEN State TIP/RING Leakage Current
Internal Blocking Diode Forward Voltage
I
100
LKG
L
V
V
– V (Note 2)
BATL
0.8
F
BAT
Notes:
1. VAC = 2.5 VPK, RLOAD = 600 Ω.
2. IOUT = 60 mA
Table 9. DC Characteristics (VDD, VDD1–VDD4 = 5 V)
(VDD, VDD1–VDD4 = 4.75 V to 5.25 V, TA = 0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
Parameter
Symbol
Test Condition
Min
0.7 x VDD
Typ
—
Max
5.25
Unit
V
High Level Input
V
IH
Voltage
Low Level Input
Voltage
V
—
VDD – 0.6
—
—
—
—
—
0.3 x VDD
—
V
V
V
V
IL
High Level Output
V
I = 8 mA
OH
O
Voltage
Low Level Output
Voltage
V
DTX, SDO, INT, SDITHRU:
0.4
OL
I = –8 mA
O
BATSELa/b, RRDa/b,
—
0.72
GPOa/b, TRD1a/b,TRD2a/b:
I = –40 mA
O
SDITHRU Internal
Pullup Resistance
20
—
—
—
30
63
11
—
—
—
kΩ
Ω
Relay Driver Source
R
V
V
–V
O
= 4.75 V
DD4
OUT
DD1
Impedance
I < 28 mA
Relay Driver Sink
Impedance
Input Leakage Current
R
–V = 4.75 V
—
Ω
IN
DD1
DD4
I < 85 mA
O
I
±10
µA
L
14
Rev. 1.0
SILICONIMAGE [ Silicon image ]
