MS18R1622(4/8)DH0
Absolute Maximum Ratings
Table 4 : Absolute Maximum Rating
Symbol
VI,ABS
Parameter
Voltage applied to any RSL or CMOS signal pad with respect to Gnd
Voltage on VDD with respect to Gnd
Storage temperature
Min
- 0.3
- 0.5
- 50
-
Max
VDD + 0.3
VDD + 1.0
100
Unit
V
VDD,ABS
TSTORE
TPLATE
V
°C
Plate temperature
92
°C
DC Recommended Electrical Conditions
Table 5 : DC Recommended Electrical Conditions
Symbol
VDD
Parameter and Conditions
Min
Max
Unit
Supply voltage
2.50 - 0.13
2.50 + 0.13
V
VCMOS
CMOS I/O power supply at pad for 2.5V controllers
CMOS I/O power supply at pad for 1.8V controllers
VDD
1.8 - 0.1
VDD
1.8 + 0.2
V
V
VREF
VSPD
Reference voltage
1.4 - 0.2
2.2
1.4 + 0.2
3.6
V
V
Serial Presence Detector- Positive power supply
Table 6 : SO-RIMM Module Capacity and Number of RDRAM device
SO-RIMM Module Capacity
Number of 288Mb RDRAM devices
288MB
144MB
72MB
8
4
2
Rev. 1.0 July 2002
Page 6
SAMSUNG [ SAMSUNG ]
