MS18R1622(4/8)DH0
Vdd
2 per
RDRAM device
a
SIO0
SIO1
SCK
CMD
Vref
0.22/0.1µF
U1
RDRAM device (288Mb)
Gnd
VREF
1 per
2 RDRAM devices
Plus one
SIO0
SIO1
SCK
CMD
Vref
U2
Near Connector
a
0.22/0.1µF
RDRAM device (288Mb)
Gnd
VCMOS
1 per
2 RDRAM devices
0.22/0.1µF
SIO0
SIO1
SCK
CMD
a
U3
RDRAM device (288Mb)
Gnd
Vref
•
•
•
a.
•
•
∗ 0.1µF for 800MHz
•
∗ 0.22µF for 1066MHz
SIO0
SIO1
SCK
CMD
Vref
UN
RDRAM device (288Mb)
Module
N
Capacity
288MB
144MB
72MB
8
4
2
Note 1. Rambus Channel signals form a loop through
SVDD
Serial Presence Detect
the RIMM module, with the exception of the SIO chain.
SVDD
Note 2. See Serial Presence Detection Specification for
information on the SPD device and its contents.
Vcc
A1
SCL
WP
A0
SDA
A2
SCL
SWP
47KΩ
SDA
a
0.22/0.1µF
U0
SA0
SA1
Gnd
Figure 2: SO-RIMM Module Functional Diagram
Rev. 1.0 July 2002
Page 5
SAMSUNG [ SAMSUNG ]
