512MB, 1GB, 2GB Registered DIMMs
DDR2 SDRAM
Operating Current Table(1-1) (TA=0oC, VDD= 1.9V)
M393T6553CZ3 / M393T6553CZA : 512MB(64Mx8 *9) Module
Symbol
IDD0
IDD1
E7(800@CL=5)
E6(667@CL=5)
D5(533@CL=4)
1,240
1,405
562
CC(400@CL=3)
1,130
1,285
522
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
IDD6*
760
775
750
348
1,000
1,620
1,525
1,780
72
710
715
720
338
930
1,410
1,340
1,720
72
IDD7
TBD
TBD
2,660
2,570
* IDD6 = DRAM current + standby current of PLL and Register
** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M393T2953CZ3 / M393T2953CZA : 1GB(64Mx8 *18) Module
Symbol
IDD0
IDD1
E7(800@CL=5)
E6(667@CL=5)
D5(533@CL=4)
1,655
1,830
784
CC(400@CL=3)
1,575
1,770
724
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
IDD6*
1,200
1,180
1,190
546
1,345
2,065
1,970
2,215
144
1,130
1,150
1,130
516
1,325
1,865
1,785
2,125
144
IDD7
TBD
TBD
3,335
3,095
* IDD6 = DRAM current + standby current of PLL and Register
** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev. 1.2 Aug. 2005
SAMSUNG [ SAMSUNG ]
