512MB, 1GB, 2GB Registered DIMMs
DDR2 SDRAM
Operating Current Table(1-2) (TA=0oC, VDD= 1.9V)
M393T2950CZ3 / M393T2950CZA : 1GB(128Mx4 *18) Module
Symbol
IDD0
IDD1
E7(800@CL=5)
E6(667@CL=5)
D5(533@CL=4)
2,060
2,370
784
CC(400@CL=3)
1,980
2,310
724
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
IDD6*
1,200
1,180
1,190
546
1,480
2,650
2,600
3,160
144
1,130
1,150
1,130
516
1,460
2,360
2,370
3,070
144
IDD7
TBD
TBD
5,000
4,760
* IDD6 = DRAM current + standby current of PLL and Register
** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M393T5750CZ3 / M393T5750CZA : 2GB(128Mx4 *36) Module
Symbol
IDD0
IDD1
E7(800@CL=5)
E6(667@CL=5)
D5(533@CL=4)
2,980
3,340
1,238
2,060
2,030
2,050
922
CC(400@CL=3)
2,830
3,220
1,138
1,950
1,990
1,950
872
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
IDD6*
2,350
3,630
3,430
4,090
288
2,320
3,240
3,160
3,940
288
IDD7
TBD
TBD
6,330
5,880
* IDD6 = DRAM current + standby current of PLL and Register
** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev. 1.2 Aug. 2005
SAMSUNG [ SAMSUNG ]
