OneNAND512Mb(KFG1216U2B-xIB6)
FLASH MEMORY
5.0 AC CHARACTERISTICS
5.1
AC Test Conditions
Parameter
Value (66MHz)
0V to VCC
3ns
Input Pulse Levels
Input Rise and Fall Times
CLK
other inputs
5ns
VCC/2
Input and Output Timing Levels
Output Load
CL = 30pF
Device
Under
Test
VCC
Input & Output
VCC/2
VCC/2
Test Point
* CL = 30pF including scope
and Jig capacitance
0V
Input Pulse and Test Point
Output Load
5.2
Device Capacitance
CAPACITANCE(TA = 25 °C, VCC = 3.3V, f = 1.0MHz)
KFG1216U2B
Unit
Item
Symbol
Test Condition
Min
Max
10
Input Capacitance
Control Pin Capacitance
Output Capacitance
INT Capacitance
CIN1
CIN2
COUT
CINT
VIN=0V
-
-
-
-
pF
pF
pF
pF
10
VIN=0V
VOUT=0V
VOUT=0V
10
10
NOTE : Capacitance is periodically sampled and not 100% tested.
5.3
Valid Block Characteristics
Parameter
Valid Block Number
Symbol
Min
Typ.
Max
512
Unit
Blocks
NVB
502
-
NOTES:
1. The device may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or program
factory-marked bad blocks.
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 1bit/512byte ECC
98
SAMSUNG [ SAMSUNG ]
