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KFG1216U2B-SIB6 参数 Datasheet PDF下载

KFG1216U2B-SIB6图片预览
型号: KFG1216U2B-SIB6
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 32MX16, 70ns, PBGA67]
分类和应用: 内存集成电路
文件页数/大小: 120 页 / 1551 K
品牌: SAMSUNG [ SAMSUNG ]
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OneNAND512Mb(KFG1216U2B-xIB6)  
FLASH MEMORY  
Invalid Block Table Creation Flow Chart  
Start  
Set Block Address = 0  
Increment Block Address  
Check "FFFFh" at the 1st word of sector 0  
of spare area in 1st and 2nd page  
*
No  
No  
Check  
Create (or update)  
Invalid Block(s) Table  
"FFFFh" ?  
Yes  
Last Block ?  
Yes  
End  
3.14.2 Invalid Block Replacement Operation  
Within its life time, additional invalid blocks may develop with NAND Flash Array memory. Refer to the device's qualification report for  
the actual data.  
The following possible failure modes should be considered to implement a highly reliable system.  
In the case of a status read failure after erase or program, a block replacement should be done. Because program status failure  
during a page program does not affect the data of the other pages in the same block, a block replacement can be executed with a  
page-sized buffer by finding an erased empty block and reprogramming the current target data and copying the rest of the replaced  
block.  
Block Failure Modes and Countermeasures  
Failure Mode  
Erase Failure  
Detection and Countermeasure sequence  
Status Read after Erase --> Block Replacement  
Status Read after Program --> Block Replacement  
Error Correction by ECC mode of the device  
Program Failure  
Single Bit Failure in Load Operation  
94  
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