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KFG1216U2B-SIB6 参数 Datasheet PDF下载

KFG1216U2B-SIB6图片预览
型号: KFG1216U2B-SIB6
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 32MX16, 70ns, PBGA67]
分类和应用: 内存集成电路
文件页数/大小: 120 页 / 1551 K
品牌: SAMSUNG [ SAMSUNG ]
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OneNAND512Mb(KFG1216U2B-xIB6)  
FLASH MEMORY  
5.4  
AC Characteristics for Synchronous Burst Read  
See Timing Diagrams 6.1, 6.2 and 6.3.  
Parameter  
KFG1216U2B  
Symbol  
Unit  
Min  
1
Max  
66  
-
Clock  
CLK  
tCLK  
tIAA  
MHz  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Clock Cycle  
15  
-
Initial Access Time  
70  
11  
-
Burst Access Time Valid Clock to Output Delay  
AVD Setup Time to CLK  
tBA  
-
tAVDS  
tAVDH  
tACS  
tACH  
tBDH  
tOE  
5
AVD Hold Time from CLK  
2
-
Address Setup Time to CLK  
Address Hold Time from CLK  
Data Hold Time from Next Clock Cycle  
Output Enable to Data  
5
-
6
-
2.5  
-
-
20  
20  
1)  
CE Disable to Output & RDY High Z  
-
tCEZ  
1)  
OE Disable to Output High Z  
CE Setup Time to CLK  
CLK High or Low Time  
-
15  
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tOEZ  
tCES  
6
tCLKH/L  
tCLK/3  
-
CLK 2) to RDY valid  
tRDYO  
-
-
11  
11  
-
CLK to RDY Setup Time  
RDY Setup Time to CLK  
CE low to RDY valid  
tRDYA  
tRDYS  
tCER  
4
-
15  
Note  
1. If OE is disabled at the same time or before CE is disabled, the output will go to high-z by tOEZ.  
If CE is disabled at the same time or before OE is disabled, the output will go to high-z by tCEZ.  
If CE and OE are disabled at the same time, the output will go to high-z by tOEZ.  
2. It is the following clock of address fetch clock.  
99  
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