OneNAND512Mb(KFG1216U2B-xIB6)
4.3 DC Characteristics
FLASH MEMORY
RMS Value
Unit
Parameter
Symbol
Test Conditions
Min
Typ
Max
Input Leakage Current
ILI
VIN=VSS to VCC, VCC=VCCmax
- 1.0
-
+ 1.0
µA
µA
VOUT=VSS to VCC, VCC=VCCmax,
CE or OE=VIH(Note 1)
Output Leakage Current
ILO
- 1.0
-
-
+ 1.0
22
Active Asynchronous Read Current (Note
2)
ICC1
ICC2R
ICC3
CE=VIL, OE=VIH
18
mA
66MHz
1MHz
-
-
25
7
35
9
mA
mA
Active Burst Read Current (Note 2)
CE=VIL, OE=VIH, WE=VIH
CE=VIL, OE=VIH
Active Asynchronous Write Current (Note
2)
-
17
22
mA
Active Load Current (Note 3)
Active Program Current (Note 3)
Active Erase Current (Note 3)
Multi Block Erase Current (Note 3)
Standby Current
ICC4
ICC5
ICC6
ICC7
ISB
CE=VIL, OE=VIH, WE=VIH
CE=VIL, OE=VIH, WE=VIH
CE=VIL, OE=VIH, WE=VIH
-
-
30
28
23
23
35
-
40
35
30
30
80
0.8
mA
mA
mA
mA
µA
V
-
CE=VIL, OE=VIH, WE=VIH, 64blocks
-
CE= RP=VCC ± 0.2V
-
Input Low Voltage
VIL
-
0
0.7*
VCCq
Input High Voltage (Note 4)
Output Low Voltage
VIH
VOL
VOH
-
-
-
-
VCCq
V
V
V
0.22*
Vccq
-
IOL = 100 µA ,VCC=VCCmin , VCCq=VCCqmin
IOH = -100 µA , VCC=VCCmin , VCCq=VCCqmin
0.8*
VCCq
Output High Voltage
-
Note 1. CE should be VIH for RDY. IOBE should be ’0’ for INT.
Note 2. I active for Host access
CC
Note 3. I active for Internal operation. (without host access)
CC
Note 4. Vccq is equivalent to Vcc-IO
97
SAMSUNG [ SAMSUNG ]
