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KFG1216U2B-SIB6 参数 Datasheet PDF下载

KFG1216U2B-SIB6图片预览
型号: KFG1216U2B-SIB6
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 32MX16, 70ns, PBGA67]
分类和应用: 内存集成电路
文件页数/大小: 120 页 / 1551 K
品牌: SAMSUNG [ SAMSUNG ]
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OneNAND512Mb(KFG1216U2B-xIB6)  
FLASH MEMORY  
3.4.3.1 Unlocked NAND Array Write Protection State  
An Unlocked block can be programmed or erased. The status of an unlocked block can be changed to locked or locked-tight using  
the appropriate software command. (locked-tight state can be achieved via lock-tight command which follows lock command)  
Only one block can be released from lock state to unlock state with Unlock command and addresses. The unlocked block can be  
changed with new lock command. Therefore, each block has its own lock/unlock/lock-tight state.  
Also, By issuing All Block Unlock command, all blocks excluding Lock-tighten blocks will turn to Unlocked state.  
Unlocked  
Unlock Command Sequence:  
Start block address+Unlock block command (0023h)  
Unlocked  
All Block Unlock Command Sequence:  
Start block address(000h)+All Block Unlock command (0027h)  
Note) Even though SBA is fixed to 000h, Unlock will be done for  
all block.  
3.4.3.2 Locked NAND Array Write Protection State  
A Locked block cannot be programmed or erased. All blocks default to a locked state following a Cold or Warm Reset. Unlocked  
blocks can be changed to locked using the Lock block command. The status of a locked block can be changed to unlocked or  
locked-tight using the appropriate software command.  
Locked  
Lock Command Sequence:  
Start block address+Lock block command (002Ah)  
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