OneNAND512Mb(KFG1216U2B-xIB6)
FLASH MEMORY
3.4.3.3 Locked-tight NAND Array Write Protection State
A block that is in a locked-tight state can only be changed to locked state after a Cold or Warm Reset. Unlock and Lock command
sequences will not affect its state. This is an added level of write protection security.
A block must first be set to a locked state before it can be changed to locked-tight using the Lock-tight command. locked-tight blocks
will revert to a locked state following a Cold or Warm Reset.
Locked-tight
Lock-Tight Command Sequence:
Start block address+Lock-tight block command (002Ch)
3.4.4
NAND Flash Array Write Protection State Diagram
unlock
RP pin: High
&
Start block address (000h)
+All Block Unlock Command
RP pin: High
&
Start block address
Lock block Command
or
Lock
unlock
Lock
RP pin: High
&
Start block address
+Unlock block Command
Cold reset or
Warm reset
Power On
Lock
RP pin: High
&
Start block address
Cold reset or
Warm reset
+Lock-tight block Command
Lock
Lock-tight
Lock
*Note: If the 1st Block is set to be OTP, Block 0 will always be Lock Status
62
SAMSUNG [ SAMSUNG ]
