OneNAND512Mb(KFG1216U2B-xIB6)
FLASH MEMORY
Data Protection Operation Flow Diagram
Start
Write ’SBA’ of Flash
Add: F24Ch DQ=SBA
Write 0 to interrupt register1)
Add: F241h DQ=0000h
Write ’lock/unlock/lock-tight’
Command
Add: F220h
DQ=002Ah/0023h/002Ch
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Read Controller
Status Register
Add: F240h DQ[10]=0(pass)
Read Write Protection Register
Add: F24Eh DQ[2:0]=US,LS,LTS
Lock/Unlock/Lock-Tight
completed
* Samsung strongly recommends to follow the above flow chart
Note 1) ’Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1
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SAMSUNG [ SAMSUNG ]
