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KFG1216U2B-SIB6 参数 Datasheet PDF下载

KFG1216U2B-SIB6图片预览
型号: KFG1216U2B-SIB6
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 32MX16, 70ns, PBGA67]
分类和应用: 内存集成电路
文件页数/大小: 120 页 / 1551 K
品牌: SAMSUNG [ SAMSUNG ]
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OneNAND512Mb(KFG1216U2B-xIB6)  
FLASH MEMORY  
6.15  
Hot Reset Timing  
See AC Characteristics Table 5.6  
AVD  
BP(Note 3)  
or F220h  
A0~A15  
DQ0~DQ15  
CE  
00F0h  
or 00F3h4)  
OE  
WE  
tReady2  
INT  
bit  
High-Z  
RDY  
OneNAND  
Operation  
Idle  
Operation or Idle  
OneNAND reset  
NOTE:  
1. Internal reset operation means that the device initializes internal registers and makes output signals go to default status and bufferRAM data are kept  
unchanged after Warm/Hot reset operations.  
2. Reset command : Command based reset or Register based reset  
3. BP(Boot Partition): BootRAM area [0000h~01FFh, 8000h~800Fh]  
4. 00F0h for BP, and 00F3h for F220h  
112  
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