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KFG1216U2B-SIB6 参数 Datasheet PDF下载

KFG1216U2B-SIB6图片预览
型号: KFG1216U2B-SIB6
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 32MX16, 70ns, PBGA67]
分类和应用: 内存集成电路
文件页数/大小: 120 页 / 1551 K
品牌: SAMSUNG [ SAMSUNG ]
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OneNAND512Mb(KFG1216U2B-xIB6)  
FLASH MEMORY  
6.11  
Program Operation Timing  
See AC Characteristics Tables 5.7 and 5.8  
Program Command Sequence (last two cycles)  
Read Status Data  
tAH  
tAWES  
A0:A15  
AA  
BA  
tCS  
CA  
tCS  
SA  
SA  
AA*  
In  
DQ0-DQ15  
Complete  
PMB  
PMA  
tCH  
BD  
tCH  
PCD  
Progress  
tDH  
tDS  
CE  
OE  
WE  
tCH  
tWPL  
tWPH  
tCS  
tPGM1 or tPGM2  
tINTW  
tWC  
VIL  
CLK  
INT  
NOTES:  
1. AA = Address of address register  
CA = Address of command register  
PCD = Program Command  
PMA = Address of memory to be programmed  
BA = Address of BufferRAM to load the data  
BD = Program Data  
SA = Address of status register  
AA* = Address of Start Address1 Register(for Flash Block Address)  
PMB = DFS & FBA(Flash Block address) of memory to be programmed next time  
2. “In progress” and “complete” refer to status register  
3. Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.  
4. tINTW should be guranteed in case of consecutive Program/Erase/Multi-block erase/Lock/Unlock/Lock-tight operations  
108  
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