Preliminary
K5A3x80YT(B)C
MCP MEMORY
Flash SWITCHING WAVEFORMS
Word to Byte Timing Diagram for Read Operation
tCE
CE
F
OE
BYTE
DQ0-DQ7
DQ8-DQ14
tELFL
Data Output
(DQ0-DQ7)
Data Output
(DQ8-DQ14)
Data Output
(DQ15)
Address Input (A-1)
DQ15/A-1
tFLQZ
Byte to Word Timing Diagram for Read Operation
tCE
CE
F
OE
BYTE
tELFH
Data Output
(DQ0-DQ7)
DQ0-DQ7
Data Output
(DQ8-DQ14)
DQ8-DQ14
Address Input
(A-1)
Data Output
(DQ15)
DQ15/A-1
tFHQV
BYTE Timing Diagram for Write Operation
CE
F
The falling edge of the last WE signal
WE
BYTE
tSET
(tAS)
tHOLD(tAH)
70ns
80ns
Parameter
Symbol
Unit
Min
Max
70
5
Min
Max
80
5
Chip Enable Access Time
tCE
tELFL/tELFH
tFLQZ
-
-
-
-
-
-
-
-
ns
ns
ns
ns
CE to BYTE Switching Low or High
F
BYTE Switching Low to Output HIGH-Z
BYTE Switching High to Output Active
25
25
25
25
tFHQV
Revision 0.0
November 2002
- 34 -
SAMSUNG [ SAMSUNG ]
