Preliminary
K5A3x80YT(B)C
MCP MEMORY
Flash AC CHARACTERISTICS
Write(Erase/Program)Operations
Alternate WE Controlled Write
70ns
80ns
Unit
Parameter
Symbol
Min
70
0
Max
Min
80
0
Max
Write Cycle Time (1)
tWC
tAS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Setup Time
tASO
tAH
55
45
0
55
45
0
Address Hold Time
tAHT
tDS
Data Setup Time
35
0
35
0
Data Hold Time
tDH
Output Enable Setup Time (1)
tOES
tOEH1
tOEH2
tCS
0
0
Read (1)
0
0
Output Enable
Hold Time
Toggle and Data Polling (1)
10
0
10
0
CE Setup Time
F
CE Hold Time
tCH
tWP
0
-
-
-
0
-
-
-
ns
ns
ns
ms
ms
ms
ms
sec
ms
F
Write Pulse Width
35
25
35
25
Write Pulse Width High
tWPH
Word
Byte
Word
Byte
14(typ.)
9(typ.)
14(typ.)
Programming Operation
tPGM
9(typ.)
9(typ.)
9(typ.)
Accelerated Programming Operation
Block Erase Operation (2)
tACCPGM
7(typ.)
7(typ.)
tBERS
tVCS
0.7(typ.)
0.7(typ.)
Vcc Set Up Time
50
-
50
-
F
Write Recovery Time from RY/BY
RESET High Time Before Read
RESET to Power Down Time
Program/Erase Valid to RY/BY Delay
VID Rising and Falling Time
tRB
tRH
0
-
-
0
50
20
90
500
500
-
-
-
ns
ns
ms
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
50
20
90
tRPD
tBUSY
tVID
-
-
-
-
500
500
-
-
-
RESET Pulse Width
tRP
-
-
RESET Low to RY/BY High
tRRB
tRSP
20
-
20
-
RESET Setup Time for Temporary Unprotect
RESET Low Setup Time
1
1
tRSTS
tRSTW
tGHWL
tCEPH
tOEPH
500
200
0
-
500
200
0
-
RESET High to Address Valid
Read Recovery Time Before Write
CE High during toggling bit polling
OE High during toggling bit polling
-
-
-
-
20
20
-
20
20
-
-
-
NOTES: 1. Not 100% tested.
2. The duration of the Program or Erase operation varies and is calculated in the internal algorithms.
Revision 0.0
November 2002
- 28 -
SAMSUNG [ SAMSUNG ]
