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K5A3280YTC-T855 参数 Datasheet PDF下载

K5A3280YTC-T855图片预览
型号: K5A3280YTC-T855
PDF下载: 下载PDF文件 查看货源
内容描述: MCP内存 [MCP MEMORY]
分类和应用:
文件页数/大小: 45 页 / 619 K
品牌: SAMSUNG [ SAMSUNG ]
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Preliminary  
K5A3x80YT(B)C  
MCP MEMORY  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Symbol  
Rating  
Unit  
Vcc  
Vcc , Vcc  
-0.3 to +3.6  
-0.3 to +12.5  
-0.3 to +12.5  
F
S
RESET  
Voltage on any ball relative to Vss  
WP/ACC  
V
VIN  
All Other Balls  
-0.3 to Vcc+0.3V(Max.3.6V)  
-40 to +125  
Temperature Under Bias  
Storage Temperature  
Operating Temperature  
Tbias  
Tstg  
TA  
°C  
°C  
°C  
-65 to +150  
-40 to +85  
NOTES:  
1. Minimum DC voltage is -0.3V on Input/ Output balls. During transitions, this level may fall to -2.0V for periods <20ns. Maximum DC voltage on  
input / output balls is Vcc+0.3V(Max. 3.6V) which, during transitions, may overshoot to Vcc+2.0V for periods <20ns.  
2. Minimum DC voltage is -0.3V on RESET and WP/ACC balls. During transitions, this level may fall to -2.0V for periods <20ns. Maximum DC  
voltage on RESET and WP/ACC balls are 12.5V which, during transitions, may overshoot to 14.0V for periods <20ns.  
3. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions  
detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.  
RECOMMENDED OPERATING CONDITIONS(Voltage reference to Vss)  
Parameter  
Symbol  
Min  
2.7  
0
Typ.  
3.0  
0
Max  
3.3  
0
Unit  
V
Supply Voltage  
Vcc , Vcc  
F
S
Supply Voltage  
Vss  
V
DC CHARACTERISTICS  
Parameter  
Symbol  
ILI  
Test Conditions  
Min  
-1.0  
-1.0  
-0.3  
Typ  
Max  
Unit  
mA  
mA  
V
Input Leakage Current  
Output Leakage Current  
Input Low Level  
VIN=Vss to Vcc, Vcc=Vccmax  
-
-
-
+1.0  
+1.0  
0.5  
ILO  
VOUT=Vss to Vcc, Vcc=Vccmax, OE=VIH  
VIL  
Common  
Vcc  
+0.3  
Input High Level  
VIH  
2.2  
-
V
Output Low Level  
VOL  
VOH  
ILIT  
IOL= 2.1mA, Vcc = Vccmin  
IOH= -1.0mA, Vcc = Vccmin  
-
2.3  
-
-
-
-
0.4  
-
V
V
Output High Level  
Vcc =Vccmax, RESET=12.5V  
F
RESET Input Leakage Current  
35  
mA  
Vcc =Vccmax, WP/ACC=12.5V  
F
WP/ACC Input Leakage Current  
Active Read Current (1)  
ILIW  
-
-
-
-
-
35  
20  
6
mA  
5MHz  
14  
3
CE =VIL, OE=VIH  
F
ICC1  
mA  
1MHz  
Active Write Current (2)  
CE =VIL, OE=VIH  
F
mA  
mA  
mA  
ICC2  
ICC3  
ICC4  
15  
30  
CE =VIL, OE=VIH  
F
Read While Program Current (3)  
Read While Erase Current (3)  
-
-
25  
25  
50  
50  
CE =VIL, OE=VIH  
F
Program While Erase Suspend  
Current  
Flash  
CE =VIL, OE=VIH  
F
ICC5  
IACC  
-
15  
35  
mA  
mA  
ACC Ball  
-
-
5
10  
30  
ACC Accelerated Program  
Current  
CE =VIL, OE=VIH  
F
VccF Ball  
15  
Vcc =Vcc max, CE =Vcc ± 0.3V,  
F
F
F
F
RESET=Vcc ± 0.3V,  
Standby Current  
ISB1  
ISB2  
-
-
5
5
18  
18  
mA  
mA  
F
WP/ACC=Vcc ± 0.3V or Vss± 0.3V  
F
Vcc =Vcc max, RESET=Vss±0.3V,  
F
F
Standby Curren During Reset  
WP/ACC=Vcc ± 0.3V or Vss± 0.3V  
F
Revision 0.0  
November 2002  
- 26 -  
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