Preliminary
K5A3x80YT(B)C
MCP MEMORY
Flash AC CHARACTERISTICS
Write(Erase/Program)Operations
Alternate CE Controlled Writes
F
70ns
80ns
Unit
Parameter
Symbol
Min
70
0
Max
Min
80
0
Max
Write Cycle Time (1)
Address Setup Time
Address Hold Time
Data Setup Time
tWC
tAS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tAH
45
35
0
45
35
0
tDS
Data Hold Time
tDH
Output Enable Setup Time (1)
tOES
tOEH1
tOEH2
tWS
tWH
tCP
0
0
Read (1)
0
0
Output Enable
Hold Time
Toggle and Data Polling (1)
10
0
10
0
WE Setup Time
WE Hold Time
0
0
CE Pulse Width
35
35
F
CE Pulse Width High
tCPH
tPGM
25
-
25
-
ns
ms
ms
ms
ms
sec
ns
F
Word
Byte
Word
Byte
14(typ.)
9(typ.)
14(typ.)
Programming Operation
9(typ.)
9(typ.)
9(typ.)
Accelerated Programming Operation
tACCPGM
7(typ.)
7(typ.)
Block Erase Operation (2)
tBERS
tFLQZ
0.7(typ.)
0.7(typ.)
BYTE Switching Low to Output HIGH-Z
25
-
25
-
NOTES: 1. Not 100% tested.
2.This does not include the preprogramming time.
ERASE AND PROGRAM PERFORMANCE
Limits
Typ
Parameter
Unit
Comments
Min
Max
Excludes 00H programming
prior to erasure
Block Erase Time
-
0.7
15
sec
Chip Erase Time
-
-
-
-
-
-
-
49
14
9
-
sec
ms
Word Programming Time
Byte Programming Time
330
210
210
150
84
Excludes system-level overhead
Excludes system-level overhead
Excludes system-level overhead
Excludes system-level overhead
ms
Word Mode
Byte Mode
Word Mode
Byte Mode
9
ms
Accelerated Byte/Word
Program Time
7
ms
28
36
sec
sec
Chip Programming Time
Erase/Program Endurance
Excludes system-level overhead
108
Minimum 100,000 cycles guaran-
teed
100,000
-
-
cycles
NOTES: 1. 25 °C, VccF = 3.0V 100,000 cycles, typical pattern.
2. System-level overhead is defined as the time required to execute the four bus cycle command necessary to program each byte.
In the preprogramming step of the Internal Erase Routine, all bytes are programmed to 00H before erasure.
Revision 0.0
November 2002
- 29 -
SAMSUNG [ SAMSUNG ]
