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K4D623238B-GC/L45 参数 Datasheet PDF下载

K4D623238B-GC/L45图片预览
型号: K4D623238B-GC/L45
PDF下载: 下载PDF文件 查看货源
内容描述: 64Mbit的DDR SDRAM [64Mbit DDR SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 17 页 / 149 K
品牌: SAMSUNG [ SAMSUNG ]
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64M DDR SDRAM  
K4D623238B-GC  
FUNCTIONAL DESCRIPTION  
Power-Up Sequence  
DDR SDRAMs must be powered up and initialized in a predefined manner to prevent undefined operations.  
1. Apply power and keep CKE at low state (All other inputs may be undefined)  
- Apply VDD before VDDQ .  
- Apply VDDQ before VREF & VTT  
2. Start clock and maintain stable condition for minimum 200us.  
3. The minimum of 200us after stable power and clock(CK,CK), apply NOP and take CKE to be high .  
4. Issue precharge command for all banks of the device.  
5. Issue a EMRS command to enable DLL  
*1  
6. Issue a MRS command to reset DLL. The additional 200 clock cycles are required to lock the DLL.  
*1,2 7. Issue precharge command for all banks of the device.  
8. Issue at least 2 or more auto-refresh commands.  
9. Issue a mode register set command with A8 to low to initialize the mode register.  
*1 The additional 200cycles of clock input is required to lock the DLL after enabling DLL.  
*2 Sequence of 6&7 is regardless of the order.  
Power up & Initialization Sequence  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
CK,CK  
tRP  
2 Clock min.  
tRFC  
tRFC  
2 Clock min.  
tRP  
2 Clock min.  
Command  
precharge  
MRS  
DLL Reset  
precharge  
ALL Banks  
2nd Auto  
Refresh  
1st Auto  
Refresh  
Mode  
Register Set  
A n y  
Command  
E M R S  
ALL Banks  
200 Clock min.  
Inputs must be  
stable for 200us  
- 7 -  
Rev. 1.4 (Sep. 2002)  
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