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K4B2G0846D-HYH9 参数 Datasheet PDF下载

K4B2G0846D-HYH9图片预览
型号: K4B2G0846D-HYH9
PDF下载: 下载PDF文件 查看货源
内容描述: 2GB D-死DDR3L SDRAM [2Gb D-die DDR3L SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 64 页 / 1744 K
品牌: SAMSUNG [ SAMSUNG ]
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Rev. 1.01  
K4B2G0446D  
K4B2G0846D  
datasheet  
DDR3L SDRAM  
[ Table 48 ] DDR3-1600 Speed Bins  
Speed  
DDR3-1600  
CL-nRCD-nRP  
11-11-11  
Units  
NOTE  
Parameter  
Symbol  
min  
max  
13.75  
Internal read command to first data  
tAA  
20  
ns  
ns  
ns  
ns  
(13.125)8  
13.75  
ACT to internal read or write delay time  
PRE command period  
tRCD  
tRP  
-
-
-
(13.125)8  
13.75  
(13.125)8  
48.75  
ACT to ACT or REF command period  
ACT to PRE command period  
tRC  
(48.125)8  
tRAS  
35  
9*tREFI  
3.3  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
nCK  
nCK  
CWL = 5  
tCK(AVG)  
tCK(AVG)  
tCK(AVG)  
tCK(AVG)  
tCK(AVG)  
tCK(AVG)  
tCK(AVG)  
tCK(AVG)  
tCK(AVG)  
tCK(AVG)  
tCK(AVG)  
tCK(AVG)  
tCK(AVG)  
tCK(AVG)  
tCK(AVG)  
tCK(AVG)  
tCK(AVG)  
tCK(AVG)  
tCK(AVG)  
tCK(AVG)  
tCK(AVG)  
3.0  
1,2,3,4,7,9,10  
CL = 5  
CWL = 6,7,8  
CWL = 5  
CWL = 6  
CWL = 7, 8  
CWL = 5  
CWL = 6  
CWL = 7  
CWL = 8  
CWL = 5  
CWL = 6  
CWL = 7  
CWL = 8  
CWL = 5,6  
CWL = 7  
CWL = 8  
CWL = 5,6  
CWL = 7  
CWL = 8  
CWL = 5,6,7  
CWL = 8  
Reserved  
4
1,2,3,7  
1,2,3,4,7  
4
2.5  
3.3  
CL = 6  
Reserved  
Reserved  
Reserved  
4
1.875  
1.875  
<2.5  
<2.5  
1,2,3,4,7  
1,2,3,4,7  
4
CL = 7  
Reserved  
Reserved  
Reserved  
4
1,2,3,7  
1,2,3,4,7  
1,2,3,4  
4
CL = 8  
CL = 9  
Reserved  
Reserved  
Reserved  
1.5  
1.5  
<1.875  
<1.875  
<1.5  
1,2,3,4,7  
1,2,3,4  
4
Reserved  
Reserved  
CL = 10  
CL = 11  
1,2,3,7  
1,2,3,4  
4
Reserved  
Reserved  
1.25  
1,2,3,8  
Supported CL Settings  
Supported CWL Settings  
5,6,7,8,9,10,11  
5,6,7,8  
- 46 -  
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