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HD6417750SBP200 参数 Datasheet PDF下载

HD6417750SBP200图片预览
型号: HD6417750SBP200
PDF下载: 下载PDF文件 查看货源
内容描述: 的SuperH RISC引擎 [SuperH RISC engine]
分类和应用: 外围集成电路时钟
文件页数/大小: 1039 页 / 6201 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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Bit 15: TRWL2  
Bit 14: TRWL1  
Bit 13: TRWL0  
Write Precharge ACT Delay Time  
0
0
0
1
0
1
0
1
0
1
1 (Initial value)  
2
1
0
1
3*  
4*  
1
5*  
Reserved (Setting prohibited)  
Reserved (Setting prohibited)  
Reserved (Setting prohibited)  
Note: * Inhibited in RAS down mode.  
Bits 12 to 10—CAS-Before-RAS Refresh 5$6 Assertion Period (TRAS2–TRAS0): When the  
DRAM interface is set, these bits set the 5$6 assertion period in CAS-before-RAS refreshing.  
When the synchronous DRAM interface is set, the bank active command is not issued for a period  
of TRC* + TRAS after an auto-refresh command is issued.  
Note: * Bits 29 to 27: RAS precharge interval at end of refresh.  
Command  
Interval after  
5$6/DRAM  
Synchronous  
Assertion Period DRAM Refresh  
Bit 12: TRAS2  
Bit 11: TRAS1  
Bit 10: TRAS0  
0
0
0
2
4 + TRC*  
(Initial value)  
1
0
1
0
1
0
1
3
4
5
6
7
8
9
5 + TRC  
6 + TRC  
7 + TRC  
8 + TRC  
9 + TRC  
10 + TRC  
11 + TRC  
1
0
1
1
Note: * Bits 29 to 27: RAS precharge interval at end of refresh.  
Bit 9—Burst Enable (BE): Specifies whether burst access is performed on DRAM interface. In  
synchronous DRAM access, burst access is always performed regardless of the specification of  
this bit. The DRAM transfer mode depends on EDOMODE.  
Rev. 6.0, 07/02, page 356 of 986  
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