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HD6417750SBP200 参数 Datasheet PDF下载

HD6417750SBP200图片预览
型号: HD6417750SBP200
PDF下载: 下载PDF文件 查看货源
内容描述: 的SuperH RISC引擎 [SuperH RISC engine]
分类和应用: 外围集成电路时钟
文件页数/大小: 1039 页 / 6201 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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Bits 21 to 19—RAS Precharge Period (TPC2–TPC0): When the DRAM interface is set, these  
bits specify the minimum number of cycles until 5$6 is asserted again after being negated. When  
the synchronous DRAM interface is set, these bits specify the minimum number of cycles until the  
next bank active command is output after precharging.  
RAS Precharge Interval  
Bit 21: TPC2  
Bit 20: TPC1  
Bit 19: TPC0  
DRAM  
Synchronous DRAM  
0
0
0
1
0
1
0
1
0
1
0
1
2
3
4
5
6
7
1* (Initial value)  
2
1
0
1
3
4*  
5*  
6*  
7*  
8*  
1
Note: * Inhibited in RAS down mode.  
Bits 17 and 16—RAS-CAS Delay (RCD1, RCD0): When the DRAM interface is set, these bits  
set the 5$6-&$6 assertion delay time. When the synchronous DRAM interface is set, these bits  
set the bank active-read/write command delay time.  
Description  
Bit 17: RCD1  
Bit 16: RCD0  
DRAM  
Synchronous DRAM  
Reserved (Setting prohibited)  
2 cycles  
0
0
1
0
1
2 cycles  
3 cycles  
4 cycles  
5 cycles  
1
3 cycles  
4 cycles*  
Note: * Inhibited in RAS down mode.  
Bits 15 to 13—Write Precharge Delay (TRWL2–TRWL0): These bits set the synchronous  
DRAM write precharge delay time. In auto-precharge mode, they specify the time until the next  
bank active command is issued after a write cycle. After a write cycle, the next active command is  
not issued for a period of TPC + TRWL. In RAS down mode, they specify the time until the next  
precharge command is issued. After a write cycle, the next precharge command is not issued for a  
period of TRWL. This setting is valid only when synchronous DRAM interface is set.  
For the setting values and delay time when no command is issued, refer to section 22.3.3, Bus  
Timing.  
Rev. 6.0, 07/02, page 355 of 986  
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