Data Sheet
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
FIGURE 26
Non-Consecutive WRITE to WRITE (max. tDQSS
)
CK
CK
Command
WRITE
NOP
NOP
WRITE
NOP
NOP
Address
BA,Col b
BA,Col n
tDQSSmax
DQS
DQ
Di b
Di n
DM
DI b (n) = Data In to column b (or column n).
= Don't Care
3 subsequent elements of Data In are applied in the programmed order following DI b.
3 subsequent elements of Data In are applied in the programmed order following DI n.
Non-interrupted bursts of 4 are shown.
Each WRITE command may be to any active bank and may be to the same or different devices.
Full-speed random WRITE accesses within a page or pages can be performed as shown in Figure 27.
FIGURE 27
Random WRITE Cycles (max. tDQSS
)
CK
CK
Command
WRITE
WRITE
WRITE
WRITE
WRITE
NOP
Address
BA,Col b
BA,Col x
BA,Col n
BA,Col a
BA,Col g
tDQSSmax
DQS
DQ
Di b
Di b'
Di x
Di x'
Di n
Di n'
Di a
Di a'
DM
DI b etc. = Data In to column b, etc. .
b', etc. = the next Data In following DI b, etc. according to the programmed burst order
= Don't Care
Programmed burst length = 2, 4, 8 or 16 in cases shown. If burst of 4, 8 or 16, burst would be truncated.
Each WRITE command may be to any active bank and may be to the same or different devices.
Rev.1.0, 2007-03
10242006-Y557-TZXW
36
QIMONDA [ QIMONDA AG ]
