Data Sheet
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
FIGURE 29
Interrupting WRITE to READ (max. tDQSS
)
CK
CK
Command
WRITE
NOP
NOP
READ
NOP
NOP
NOP
Address
BA,Col b
BA,Col n
tDQSSmax
tWTR
CL=3
DQS
DQ
Di b
DO n
DM
DI b = Data In to column b. DO n = Data Out from column n.
An interrupted burst of 4 is shown, 2 data elements are written.
= Don't Care
3 subsequent elements of Data In are applied in the programmed order following DI b.
tWTR is referenced from the positive clock edge after the last Data In pair.
A10 is LOW with the WRITE command (Auto Precharge is disabled)
The READ and WRITE commands are to the same device but not necessarily to the same bank.
Rev.1.0, 2007-03
38
10242006-Y557-TZXW
QIMONDA [ QIMONDA AG ]
