Data Sheet
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
FIGURE 25
WRITE to WRITE (min. and max. tDQSS
)
CK
CK
Command
WRITE
NOP
WRITE
NOP
NOP
NOP
Address
BA,Col b
BA,Col n
tDQSSmin
DQS
DQ
Di b
Di n
DM
tDQSSmax
DQS
DQ
Di b
Di n
DM
DI b (n) = Data In to column b (column n)
= Don't Care
3 subsequent elements of Data In are applied in the programmed order following DI b.
3 subsequent elements of Data In are applied in the programmed order following DI n.
Non-interrupted bursts of 4 are shown.
Each WRITE command may be to any active bank
An example of non-consecutive WRITEs is shown in Figure 26.
Rev.1.0, 2007-03
35
10242006-Y557-TZXW
QIMONDA [ QIMONDA AG ]
