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HYE18M1G16 参数 Datasheet PDF下载

HYE18M1G16图片预览
型号: HYE18M1G16
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位x16的移动DDR -RAM [1-Gbit x16 DDR Mobile-RAM]
分类和应用: 双倍数据速率
文件页数/大小: 65 页 / 3507 K
品牌: QIMONDA [ QIMONDA AG ]
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Data Sheet  
HY[B/E]18M1G16[0/1]BF  
1-Gbit DDR Mobile-RAM  
2.4.7.1  
WRITE to READ  
Data for any WRITE burst may be followed by a subsequent READ command. To follow a WRITE without truncating the WRITE  
burst, tWTR (WRITE to READ) should be met as shown in Figure 28.  
FIGURE 28  
Non-Interrupting WRITE to READ (max. tDQSS  
)
CK  
CK  
Command  
WRITE  
NOP  
NOP  
NOP  
READ  
NOP  
NOP  
Address  
BA,Col b  
BA,Col n  
tDQSSmax  
tWTR  
CL=3  
DQS  
DQ  
Di b  
DM  
DI b = Data In to column b .  
3 subsequent elements of Data In are applied in the programmed order following DI b.  
A non-interrupted burst of 4 is shown.  
= Don't Care  
tWTR is referenced from the positive clock edge after the last Data In pair.  
A10 is LOW with the WRITE command (Auto Precharge is disabled)  
The READ and WRITE commands are to the same device but not necessarily to the same bank.  
Data for any WRITE burst may be truncated by a subsequent READ command, as shown in Figure 29. Note that only the data-  
in pairs that are registered prior to the tWTR period are written to the internal array, and any subsequent data-in must be masked  
with DM, as shown in Figure 29.  
Rev.1.0, 2007-03  
37  
10242006-Y557-TZXW  
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