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HYE18M1G16 参数 Datasheet PDF下载

HYE18M1G16图片预览
型号: HYE18M1G16
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位x16的移动DDR -RAM [1-Gbit x16 DDR Mobile-RAM]
分类和应用: 双倍数据速率
文件页数/大小: 65 页 / 3507 K
品牌: QIMONDA [ QIMONDA AG ]
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Data Sheet  
HY[B/E]18M1G16[0/1]BF  
1-Gbit DDR Mobile-RAM  
FIGURE 31  
Interrupting WRITE to PRECHARGE (max. tDQSS  
)
CK  
CK  
Command  
WRITE  
NOP  
NOP  
NOP  
PRE  
NOP  
BA a  
Address  
BA,Col b  
(or all)  
tDQSSmax  
tWR  
*2  
DQS  
DQ  
Di b  
DM  
*1  
*1  
*1  
*1  
DI b = Data In to column b .  
An interrupted burst of 4, 8 or 16 is shown, 2 data elements are written.  
WR is referenced from the positive clock edge after the last desired Data In pair.  
= Don't Care  
t
A10 is LOW with the WRITE command (Auto Precharge is disabled)  
*1 = can be Don't Care for programmed burst length of 4  
*2 = for programmed burst length of 4, DQS becomes Don't Care at this point  
Rev.1.0, 2007-03  
10242006-Y557-TZXW  
40  
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