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HYE18M1G16 参数 Datasheet PDF下载

HYE18M1G16图片预览
型号: HYE18M1G16
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位x16的移动DDR -RAM [1-Gbit x16 DDR Mobile-RAM]
分类和应用: 双倍数据速率
文件页数/大小: 65 页 / 3507 K
品牌: QIMONDA [ QIMONDA AG ]
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Data Sheet  
HY[B/E]18M1G16[0/1]BF  
1-Gbit DDR Mobile-RAM  
2.4.7  
WRITE  
WRITE bursts are initiated with a WRITE command, as  
shown in Figure 22. Basic timings for the DQs are shown in  
Figure 23; they apply to all write operations.The starting  
column and bank addresses are provided with the WRITE  
command, and Auto Precharge is either enabled or disabled  
for that access. If Auto Precharge is enabled, the row being  
accessed is precharged at the completion of the write burst.  
For the generic WRITE commands used in the following  
illustrations, Auto Precharge is disabled.  
FIGURE 22  
WRITE Command  
CK  
CK  
CKE  
(High)  
CS  
RAS  
CAS  
WE  
A0-A9  
CA  
Enable AP  
AP  
A10  
Disable AP  
BA0,BA1  
BA  
= Don't Care  
BA = Bank Address  
CA = Column Address  
AP = Auto Precharge  
Rev.1.0, 2007-03  
31  
10242006-Y557-TZXW  
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