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HYB18T512161B2F-25 参数 Datasheet PDF下载

HYB18T512161B2F-25图片预览
型号: HYB18T512161B2F-25
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, PLASTIC, TFBGA-84]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 37 页 / 1297 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB18T512161B2F–20/25  
512-Mbit Double-Data-Rate-Two SDRAM  
3
Functional Description  
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TABLE 6  
Mode Register Definition (BA[1:0] = 00B)  
Field  
Bits  
Type1)  
Description  
Bank Address [1]  
0B BA1 Bank Address  
Bank Address [0]  
0B BA0 Bank Address  
Active Power-Down Mode Select  
BA1  
14  
reg. addr.  
BA0  
PD  
13  
12  
w
w
0B  
1B  
PD Fast exit  
PD Slow exit  
WR  
[11:9]  
Write Recovery2)  
Note: All other bit combinations are illegal.  
001B WR 2  
010B WR 3  
011B WR 4  
100B WR 5  
101B WR 6  
110B WR 7  
DLL  
TM  
CL  
8
w
w
w
DLL Reset  
0B  
1B  
DLL No  
DLL Yes  
7
Test Mode  
0B  
1B  
TM Normal Mode  
TM Vendor specific test mode  
[6:4]  
CAS Latency  
Note: All other bit combinations are illegal.  
010B CL reserved  
011B CL 3  
100B CL 4  
101B CL 5  
110B CL 6  
111B CL 7  
Rev. 1.1, 2007-06  
10  
05152007-ZYAH-ACMZ  
Date: 2008-02-26  
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