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HYB18H512321AFL20 参数 Datasheet PDF下载

HYB18H512321AFL20图片预览
型号: HYB18H512321AFL20
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 16MX32, 0.35ns, CMOS, PBGA136]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 100 页 / 1884 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB18H512321AF  
512-Mbit GDDR3  
Electrical Characteristics  
Table 38  
Timing Parameters (HYB18H512321AF–12/14/16/20)  
Parameter  
CAS  
latency  
Symbol  
Limit Values  
–16  
Unit  
–20  
–12  
–14  
min max min max min max min  
max  
20  
20  
20  
20  
Rev. ID EMRS to DQ on timing tRIDon  
ns  
ns  
20  
20  
20  
20  
REV. ID EMRS to DQ off  
tRIDoff  
timing  
1) DLLon mode  
2) tHP is the lesser of tCL minimum and tCH minimum actually applied to the device CLK, CLK inputs  
3) This value of tMRD applies only to the case where the ’DLL reset ’ bit is not activated.  
4) tMRD is defined from MRS to any other command then READ.  
5) tRAS,max is 8*tREFi  
6) tCCD is either for gapless consecutive reads or gapless consecutive writes. BL =4  
7) WTR and tWR start at the first rising edge of CLK after the last valid (falling) WDQS edge of the slowest WDQS signal.  
8) Please round up tRTW to the next integer of tCK.  
9) This parameter is defined per byte.  
Data Sheet  
94  
Rev. 1.73, 2005-08  
05122004-B1L1-JEN8  
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