NXP Semiconductors
BLA6H0912-500
LDMOS avionics radar power transistor
1.3 Applications
L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
Simplified outline
1
3
2
Graphic symbol
1
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLA6H0912-500 -
Description
flanged ceramic package; 2 mounting holes; 2 leads
Version
SOT634A
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
−0.5
-
−65
-
Max
100
+13
54
+150
200
Unit
V
V
A
°C
°C
5. Thermal characteristics
Table 5.
Symbol
Z
th(j-c)
Thermal characteristics
Parameter
transient thermal impedance from
junction to case
Conditions
T
case
= 85
°C;
P
L
= 450 W
t
p
= 32
μs; δ
= 2 %
t
p
= 128
μs; δ
= 10 %
t
p
= 2400
μs; δ
= 6.4 %
0.03
0.08
0.2
K/W
K/W
K/W
Typ
Unit
BLA6H0912-500_3
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 30 March 2010
2 of 14
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