NXP Semiconductors
BLA6H0912-500
LDMOS avionics radar power transistor
η
D
(%)
60
50
40
30
20
(1)
(2)
(3)
(4)
(5)
70
001aal602
20
G
p
(dB)
18
G
p
001aal603
70
η
D
(%)
60
16
η
D
50
14
40
12
10
0
0
200
400
P
L
(W)
600
10
950
30
1050
1150
f (MHz)
20
1250
V
DS
= 50 V; I
Dq
= 100 mA; t
p
= 128
μs; δ
= 10 %.
(1) f = 960 MHz
(2) f = 1030 MHz
(3) f = 1090 MHz
(4) f = 1140 MHz
(5) f = 1215 MHz
V
DS
= 50 V; I
Dq
= 100 mA; t
p
= 128
μs; δ
= 10 %.
Fig 5.
Drain efficiency as a function of load power;
typical values
Fig 6.
Power gain and drain efficiency as function of
frequency; typical values
16
RL
in
(dB)
12
001aal604
8
4
0
950
1050
1150
f (MHz)
1250
P
L
= 500 W; V
DS
= 50 V; I
Dq
= 100 mA; t
p
= 128
μs; δ
= 10 %.
Fig 7.
Input return loss as a function of frequency; typical values
BLA6H0912-500_3
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 30 March 2010
7 of 14
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