NXP Semiconductors
BLA6H0912-500
LDMOS avionics radar power transistor
8.3 Curves measured under Mode-S interrogator pulse-conditions
600
P
L
(W)
400
001aal608
20
G
p
(dB)
001aal609
(1)
16
(1)
(2)
(2)
12
8
200
4
0
0
4
8
12
16
P
i
(W)
20
0
0
200
400
P
L
(W)
600
f = 1030 MHz; V
DS
= 50 V; I
Dq
= 100 mA.
(1) T
h
= 25
°C
(2) T
h
= 65
°C
f = 1030 MHz; V
DS
= 50 V; I
Dq
= 100 mA.
(1) T
h
= 25
°C
(2) T
h
= 65
°C
Fig 11. Load Power as a function of input power;
typical values
Fig 12. Power gain as a function of load power;
typical values
50
η
D
(%)
40
001aal610
(1)
(2)
30
20
10
0
0
200
400
P
L
(W)
600
f = 1030 MHz; V
DS
= 50 V; I
Dq
= 100 mA.
(1) T
h
= 25
°C
(2) T
h
= 65
°C
Fig 13. Drain efficiency as function of load power; typical values
BLA6H0912-500_3
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 30 March 2010
9 of 14
PHILIPS [ NXP SEMICONDUCTORS ]
