NXP Semiconductors
BLA6H0912-500
LDMOS avionics radar power transistor
8. Test information
8.1 Performance curves
600
P
L
(W)
400
(1)
(2)
(3)
(4)
(5)
001aal600
20
G
p
(dB)
16
(1)
(2)
(3)
(4)
(5)
001aal601
12
8
200
4
0
0
6
12
P
i
(W)
18
0
0
200
400
P
L
(W)
600
V
DS
= 50 V; I
Dq
= 100 mA; t
p
= 128
μs; δ
= 10 %.
(1) f = 960 MHz
(2) f = 1030 MHz
(3) f = 1090 MHz
(4) f = 1140 MHz
(5) f = 1215 MHz
V
DS
= 50 V; I
Dq
= 100 mA; t
p
= 128
μs; δ
= 10 %.
(1) f = 960 MHz
(2) f = 1030 MHz
(3) f = 1090 MHz
(4) f = 1140 MHz
(5) f = 1215 MHz
Fig 3.
Load power as a function of input power;
typical values
Fig 4.
Power gain as a function of load power;
typical values
BLA6H0912-500_3
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 30 March 2010
6 of 14
PHILIPS [ NXP SEMICONDUCTORS ]
