NXP Semiconductors
BLA6H0912-500
LDMOS avionics radar power transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 270 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 405 mA
Min
100
1.3
-
53.5
-
2.50
-
Typ
-
1.8
-
64
-
3.5
70
Max Unit
-
2.2
3.6
-
360
85
V
V
μA
A
nA
mΩ
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 2.7 mA
4.55 S
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 14.18 A
Table 7.
RF characteristics
Mode of operation: pulsed RF; f = 960 MHz to 1215 MHz; t
p
= 128
μ
s;
δ
= 10 %; RF performance at
V
DS
= 50 V; I
Dq
= 100 mA; T
case
= 25
°
C; unless otherwise specified, in a class-AB production test
circuit.
Symbol
P
L
V
DS
G
p
RL
in
η
D
P
droop(pulse)
t
r
t
f
Parameter
output power
drain-source voltage
power gain
input return loss
drain efficiency
pulse droop power
rise time
fall time
P
L
= 450 W
P
L
= 450 W
P
L
= 450 W
P
L
= 450 W
P
L
= 450 W
P
L
= 450 W
P
L
= 450 W
Conditions
Min Typ Max Unit
-
-
16
7
45
-
-
-
450
-
17
11
50
0
20
6
-
50
-
-
-
0.3
50
50
W
V
dB
dB
%
dB
ns
ns
6.1 Ruggedness in class-AB operation
The BLA6H0912-500 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: f = 960 MHz,
1030 MHz, 1090 MHz or 1215 MHz. V
DS
= 50 V; I
Dq
= 100 mA; P
L
= 450 W; t
p
= 128
μs;
δ
= 10 %.
BLA6H0912-500_3
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 30 March 2010
3 of 14
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