BLA6H0912-500
LDMOS avionics radar power transistor
Rev. 03 — 30 March 2010
Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power transistor intended for avionics transmitter applications in the
960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.
Table 1.
Test information
Typical RF performance at T
case
= 25
°
C; t
p
= 128
μ
s;
δ
= 10 %; I
Dq
= 100 mA; in a class-AB
production test circuit.
Mode of operation
pulsed RF
f
(MHz)
960 to 1200
V
DS
(V)
50
P
L
(W)
450
G
p
(dB)
17
η
D
(%)
50
t
r
(ns)
20
t
f
(ns)
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply
voltage of 50 V, an I
Dq
of 100 mA, a t
p
of 128
μs
with
δ
of 10 %:
Output power = 450 W
Power gain = 17 dB
Efficiency = 50 %
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (960 MHz to 1215 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
PHILIPS [ NXP SEMICONDUCTORS ]
