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LM25069 参数 Datasheet PDF下载

LM25069图片预览
型号: LM25069
PDF下载: 下载PDF文件 查看货源
内容描述: 正低电压功率限制热插拔控制器 [Positive Low Voltage Power Limiting Hot Swap Controller]
分类和应用: 控制器
文件页数/大小: 24 页 / 597 K
品牌: NSC [ National Semiconductor ]
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FIGURE 10. MOSFET Power Up Waveforms  
MOSFET SELECTION  
must be at least 260 mA to conduct the GATE pull-down cur-  
rent when a circuit breaker condition is detected.  
It is recommended that the external MOSFET (Q1) selection  
be based on the following criteria:  
TIMER CAPACITOR, CT  
-
The BVDSS rating should be greater than the maximum  
The TIMER pin capacitor (CT) sets the timing for the insertion  
time delay, fault timeout period, and restart timing of the  
LM25069-2.  
system voltage (VSYS), plus ringing and transients which can  
occur at VSYS when the circuit card, or adjacent cards, are  
inserted or removed.  
A) Insertion Delay - Upon applying the system voltage  
(VSYS) to the circuit, the external MOSFET (Q1) is held off  
during the insertion time (t1 in Figure 3) to allow ringing and  
transients at VSYS to settle. Since each backplane’s response  
to a circuit card plug-in is unique, the worst case settling time  
must be determined for each application. The insertion time  
starts when VIN reaches the POR threshold, at which time the  
internal 5.5 µA current source charges CT from 0V to 1.72V.  
The required capacitor value is calculated from:  
-
The maximum continuous current rating should be based  
on the current limit threshold (50 mV/RS), not the maximum  
load current, since the circuit can operate near the current  
limit threshold continuously.  
-
The Pulsed Drain Current spec (IDM) must be greater than  
the current threshold for the circuit breaker function (95 mV/  
RS).  
-
The SOA (Safe Operating Area) chart of the device, and  
the thermal properties, should be used to determine the max-  
imum power dissipation threshold set by the RPWR resistor.  
The programmed maximum power dissipation should have a  
reasonable margin from the maximum power defined by the  
FET's SOA chart if the LM25069-2 is used since the FET will  
be repeatedly stressed during fault restart cycles. The FET  
manufacturer should be consulted for guidelines.  
For example, if the desired insertion delay is 250 ms, CT cal-  
culates to 0.8 µF. At the end of the insertion delay, CT is  
quickly discharged by a 2 mA current sink.  
-
RDS(on) should be sufficiently low that the power dissipa-  
tion at maximum load current (IL(max)2 x RDS(on)) does not raise  
its junction temperature above the manufacturer’s recom-  
mendation.  
B) Fault Timeout Period - During in-rush current limiting or  
upon detection of a fault condition where the current limit and/  
or power limit circuits regulate the current through Q1, the  
fault timer current source (80 µA) switches on to charge CT.  
The Fault Timeout Period is the time required for the voltage  
at the TIMER pin to transition from ground to 1.72V, at which  
time Q1 is switched off. If the LM25069-1 is in use, the re-  
quired capacitor value is calculated from:  
If the circuit’s input voltage is at the low end of the LM25069’s  
operating range (<3.5V), or at the high end of the operating  
range (>14V), the gate-to-source voltage applied to the MOS-  
FET by the LM25069 is less than 5V, and can approach 1V  
in a worst case situation. See the graph “GATE Pin Voltage”.  
The selected device must have a suitable Gate-to-Source  
Threshold Voltage.  
The gate-to-source voltage provided by the LM25069 can be  
as high as 19.5V at turn-on when the output voltage is zero.  
At turn-off the reverse gate-to-source voltage will be equal to  
the output voltage at the instant the GATE pin is pulled low.  
If the device chosen for Q1 is not rated for these voltages, an  
external zener diode must be added from its gate to source,  
with the zener voltage less than the device maximum VGS  
rating. The zener diode’s working voltage protects the MOS-  
FET during turn-on, and its forward voltage protects the MOS-  
FET during shutoff. The zener diode’s forward current rating  
(3)  
For example, if the desired Fault Timeout Period is 17 ms,  
CT calculates to 0.8 µF. When the Fault Timeout Period ex-  
pires, the LM25069-1 latches the GATE pin low until a power-  
up sequence is initiated by external circuitry. If the LM25069-2  
is in use, the Fault Timeout Period during restart cycles is  
approximately 18% shorter than the initial fault timeout period  
which initiated the restart cycles since the voltage at the  
TIMER pin transitions from 0.3V to 1.72V. Since the Fault  
Timeout Period must always be longer than the turn-on-time,  
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