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LM25069 参数 Datasheet PDF下载

LM25069图片预览
型号: LM25069
PDF下载: 下载PDF文件 查看货源
内容描述: 正低电压功率限制热插拔控制器 [Positive Low Voltage Power Limiting Hot Swap Controller]
分类和应用: 控制器
文件页数/大小: 24 页 / 597 K
品牌: NSC [ National Semiconductor ]
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30086716  
FIGURE 5. Restart Sequence (LM25069-2)  
drain device, as shown in Figure 6. Upon releasing the UVLO  
pin the LM25069 switches on the load current with in-rush  
current and power limiting.  
Under-Voltage Lock-Out (UVLO)  
The series pass MOSFET (Q1) is enabled when the input  
supply voltage (VSYS) is within the operating range defined by  
the programmable under-voltage lockout (UVLO) and over-  
voltage lock-out (OVLO) levels. Typically the UVLO level at  
VSYS is set with a resistor divider (R1-R3) as shown in Figure  
1. Refering to the Block Diagram when VSYS is below the UV-  
LO level, the internal 20 µA current source at UVLO is en-  
abled, the current source at OVLO is off, and Q1 is held off  
by the 2 mA pull-down current at the GATE pin. As VSYS is  
increased, raising the voltage at UVLO above its threshold the  
20 µA current source at UVLO is switched off, increasing the  
voltage at UVLO, providing hysteresis for this threshold. With  
the UVLO pin above its threshold, Q1 is switched on by the  
20 µA current source at the GATE pin if the insertion time  
delay has expired. See the Applications Section for a proce-  
dure to calculate the values of the threshold setting resistors  
(R1-R3). The minimum possible UVLO level at VSYS can be  
set by connecting the UVLO pin to VIN. In this case Q1 is  
enabled after the insertion time.  
30086717  
FIGURE 6. Shutdown Control  
Power Good Pin  
The Power Good indicator pin (PGD) is connected to the drain  
of an internal N-channel MOSFET capable of sustaining 17V  
in the off-state, and transients up to 20V. An external pull-up  
resistor is required at PGD to an appropriate voltage to indi-  
cate the status to downstream circuitry. The off-state voltage  
at the PGD pin can be higher or lower than the voltages at  
VIN and OUT. PGD is switched high when the voltage from  
SENSE to OUT (the external MOSFET’s VDS) decreases be-  
low 1.3V. PGD switches low when the MOSFET’s VDS is  
increased past 1.9V. If the UVLO pin is taken below its thresh-  
old or the OVLO pin taken above its threshold, to disable the  
LM25069, PGD switches low within 10 µs without waiting for  
the voltage at OUT to fall. The PGD output pin is high when  
the voltage at VIN is less than 1.6V.  
Over-Voltage Lock-Out (OVLO)  
The series pass MOSFET (Q1) is enabled when the input  
supply voltage (VSYS) is within the operating range defined by  
the programmable under-voltage lockout (UVLO) and over-  
voltage lock-out (OVLO) levels. If VSYS raises the OVLO pin  
voltage above its threshold Q1 is switched off by the 2 mA  
pull-down current at the GATE pin, denying power to the load.  
When the OVLO pin is above its threshold, the internal 20 µA  
current source at OVLO is switched on, raising the voltage at  
OVLO to provide threshold hysteresis. When VSYS is reduced  
below the OVLO level Q1 is enabled. See the Applications  
Section for a procedure to calculate the threshold setting re-  
sistor values.  
Shutdown Control  
The load current can be remotely switched off by taking the  
UVLO pin below its threshold with an open collector or open  
13  
www.national.com  
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