PSMN102-200Y
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
200
178
2
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
3
4
voltage
see Figure 7; see Figure 8
ID = 1 mA; VDS = VGS; Tj = 150 °C;
see Figure 7; see Figure 8
1
-
-
-
-
V
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 7; see Figure 8
4.4
IDSS
drain leakage current
gate leakage current
VDS = 160 V; VGS = 0 V; Tj = 25 °C
VDS = 160 V; VGS = 0 V; Tj = 150 °C
VGS = 20 V; VDS = 0 V; Tj = 20 °C
VGS = -20 V; VDS = 0 V; Tj = 20 °C
-
-
-
-
-
-
1
µA
µA
nA
nA
mΩ
-
100
100
100
102
IGSS
-
-
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 12 A; Tj = 25 °C;
see Figure 9; see Figure 10
86
VGS = 10 V; ID = 12 A; Tj = 150 °C;
see Figure 9; see Figure 10
-
-
206
1.1
245
-
mΩ
RG
gate resistance
f = 1 MHz
Ω
Dynamic characteristics
QG(tot)
QGS
total gate charge
ID = 12 A; VDS = 100 V; VGS = 10 V;
see Figure 11; see Figure 12
-
-
-
-
30.7
6.3
-
-
-
-
nC
nC
nC
V
gate-source charge
gate-drain charge
QGD
10.1
4.6
VGS(pl)
gate-source plateau
voltage
ID = 12 A; VDS = 100 V; see Figure 11;
see Figure 12
Ciss
Coss
Crss
input capacitance
output capacitance
VDS = 30 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 13
-
-
-
1568
170
55
-
-
-
pF
pF
pF
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 100 V; RL = 5.8 Ω; VGS = 10 V;
RG(ext) = 5.6 Ω
-
-
-
-
14.2
29.5
33
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
28
Source-drain diode
VSD source-drain voltage
IS = 12 A; VGS = 0 V; Tj = 25 °C;
see Figure 14
-
-
-
0.9
1.2
V
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 30 V
143
268
-
-
ns
nC
Qr
recovered charge
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V
PSMN102-200Y
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 03 — 16 March 2011
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