PSMN102-200Y
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
03al52
003aab743
3
200
4.5
5
a
R
DSon
(mΩ)
2
1
160
V
(V) = 6
10
GS
120
80
0
−60
0
60
120
180
0
10
20
30
40
T (°C)
j
I (A)
D
Fig 9. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 10. Drain-source on-state resistance as a function
of drain current; typical values
003aab746
10
I
= 12 A
D
V
DS
V
(V)
GS
T = 25 °C
j
I
D
8
6
4
2
0
40
100
V
GS(pl)
V
GS(th)
GS
V
= 160 V
DS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
003aaa508
0
10
20
30
40
Q
(nC)
G
Fig 11. Gate charge waveform definitions
Fig 12. Gate-source voltage as a function of gate
charge; typical values
PSMN102-200Y
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 03 — 16 March 2011
7 of 13
NEXPERIA [ Nexperia ]
