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PSMN102-200Y 参数 Datasheet PDF下载

PSMN102-200Y图片预览
型号: PSMN102-200Y
PDF下载: 下载PDF文件 查看货源
内容描述: [N-channel TrenchMOS SiliconMAX standard level FETProduction]
分类和应用: 开关脉冲晶体管
文件页数/大小: 13 页 / 923 K
品牌: NEXPERIA [ Nexperia ]
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PSMN102-200Y  
N-channel TrenchMOS SiliconMAX standard level FET  
Rev. 03 — 16 March 2011  
Product data sheet  
1. Product profile  
1.1 General description  
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in  
a plastic package using TrenchMOS technology. This product is designed and qualified for  
use in computing, communications, consumer and industrial applications only.  
1.2 Features and benefits  
Higher operating power due to low  
Suitable for high frequency  
applications due to fast switching  
characteristics  
thermal resistance  
1.3 Applications  
Class D amplifier  
Motion control  
DC-to-DC converters  
Switched-mode power supplies  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
drain-source  
voltage  
Tj 25 °C; Tj 150 °C  
-
-
-
-
-
-
200  
21.5  
113  
V
ID  
drain current  
Tmb = 25 °C; VGS = 10 V;  
see Figure 1; see Figure 3  
A
Ptot  
total power  
dissipation  
Tmb = 25 °C; see Figure 2  
W
Static characteristics  
RDSon drain-source  
VGS = 10 V; ID = 12 A;  
Tj = 25 °C; see Figure 9;  
see Figure 10  
-
-
86  
102 mΩ  
on-state  
resistance  
Dynamic characteristics  
QGD  
gate-drain charge VGS = 10 V; ID = 12 A;  
VDS = 100 V; see Figure 11;  
see Figure 12  
10.1  
-
nC  
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