PSMN102-200Y
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 03 — 16 March 2011
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low
Suitable for high frequency
applications due to fast switching
characteristics
thermal resistance
1.3 Applications
Class D amplifier
Motion control
DC-to-DC converters
Switched-mode power supplies
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min Typ Max Unit
drain-source
voltage
Tj ≥ 25 °C; Tj ≤ 150 °C
-
-
-
-
-
-
200
21.5
113
V
ID
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1; see Figure 3
A
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
W
Static characteristics
RDSon drain-source
VGS = 10 V; ID = 12 A;
Tj = 25 °C; see Figure 9;
see Figure 10
-
-
86
102 mΩ
on-state
resistance
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 12 A;
VDS = 100 V; see Figure 11;
see Figure 12
10.1
-
nC