PSMN102-200Y
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from
junction to mounting base
Mounted on a printed-circuit board;
vertical in still air; see Figure 4
-
-
1.1
K/W
003aac268
10
Z
th(j-mb)
(K/W)
1
d = 0.5
0.2
−1 0.1
10
10
10
0.05
t
p
0.02
P
δ =
T
−2
single shot
t
t
p
T
−3
10
−6
−5
−4
−3
−2
−1
10
10
10
10
10
1
t
(s)
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN102-200Y
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 03 — 16 March 2011
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