PSMN102-200Y
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
003aac023
003aab937
120
120
I
P
der
der
(%)
(%)
80
80
40
40
0
0
0
50
100
150
200
0
50
100
150
200
T
(°C)
T
(°C)
mb
mb
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of solder point temperature
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3
10
I
D
(A)
2
10
Limit R
= V / I
DS D
DSon
t
= 10 μs
p
10
100 μs
1 ms
DC
1
10 ms
100 ms
−1
10
2
3
1
10
10
10
V
(V)
DS
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN102-200Y
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 03 — 16 March 2011
3 of 13
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