PSMN102-200Y
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
003aab742
003aab744
40
50
V
DS
> I × R
D
DSon
I
V
(V) = 10
6
D
GS
I
D
(A)
(A)
40
30
30
20
10
0
20
10
0
T = 150 °C
25 °C
j
5
4.8
4.6
4.4
4.2
0
1.25
2.5
3.75
5
0
2
4
6
8
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C and 150 °C; VDS > ID x RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aac062
003aab852
−1
10
5
I
V
D
GS(th)
(V)
(A)
−2
10
4
max
min
typ
max
−3
−4
−5
−6
10
10
10
10
3
typ
2
min
1
0
0
2
4
6
−60
0
60
120
160
V
(V)
T (°C)
j
GS
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Gate-source threshold voltage as a function of
junction temperature
PSMN102-200Y
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 03 — 16 March 2011
6 of 13
NEXPERIA [ Nexperia ]
