PSMN102-200Y
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
003aab747
003aab745
4
10
50
I
S
(A)
C
(pF)
40
C
iss
3
10
30
20
10
0
T = 150 °C
25 °C
j
C
C
oss
2
10
rss
10
10
−1
2
1
10
10
0
0.3
0.6
0.9
1.2
V
(V)
V
(V)
SD
DS
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 14. Source current as a function of source-drain
voltage; typical values
PSMN102-200Y
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 03 — 16 March 2011
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